Aluminum Nitride Deep - ultraviolet Light - emitting

نویسندگان

  • Yoshitaka Taniyasu
  • Makoto Kasu
  • Toshiki Makimoto
چکیده

The shortest-wavelength color of light that is visible to the human eye is violet. As shown in Fig. 1, light with wavelengths shorter than 400 nm is called ultraviolet (UV) light: that from 300 to 400 nm is called near-UV light, that from 200 to 300 nm is called deep-UV light, and that shorter than 200 nm is called vacuum-UV light. Since vacuum-UV is absorbed by air, deep-UV light is the shortest wavelength that can be used in our living environment. The deep-UV light sources available at present are gas light sources, such as mercury lamps or gas lasers. These contain toxic substances, which cause serious environmental problems. Moreover, gas lasers require frequent supplies of gas and are large and inefficient. Therefore, replacing these gas light sources with semiconductor light-emitting devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), would save space and greatly improve reliaYoshitaka Taniyasu†, Makoto Kasu, and Toshiki Makimoto

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandga...

متن کامل

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar...

متن کامل

Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emi...

متن کامل

Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.

Materials emitting light in the deep ultraviolet region around 200 nanometers are essential in a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be a promising deep ultraviolet light emitter, has traditionally been synthesized under high pressure and at high temperatur...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007